Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Effects of Homogeneous Deformation on Band Structure of Semiconductors
Masatoshi Nakayama
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ジャーナル 認証あり

1965 年 20 巻 1 号 p. 56-61

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抄録
A general scheme to calculate the band structure of the deformed crystal in terms of the solution in the undeformed crystal is presented. A coordinate transformation is introduced to bring the deformed crystal to have the same periodicity as the undeformed crystal. The deformation potential Hamiltonian is defined in the transformed space and its symmetry property is discussed. Energy band of the deformed crystal defined in the deformed 1st Brilloun zone E(k) is obtained by substituting (1+ε+)k for k′ in the solution E′(k′) of the transformed system. This causes a new effect which exists even when the deformation potential effect vanishes (E′(k′)=E0(k′)). The strain-induced change of the local structure of the energy band is investigated by the k·p perturbation theory and is shown to be separated into two parts; the deformation potential effect at a fixed k point and the “scaling” effect. The latter is determined by the band structure of the undeformed crystal and the strain tensor. Expressions for the changes of the extremum point, of the effective mass tensor, and of the g-tensor are derived.
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