Hall Coefficient and Resistivity in the Intermediate Impurity Conduction of n-Type Germanium

抄録

Measurements of the Hall coefficient and resistivity on antimony- and arsenic-doped germanium samples in the intermediate impurity conduction range have been made employing magnetic fields up to 20 kOe. The Hall coefficient R_H for all the samples investigated increases as the temperature is lowered. In the case of As-doped samples, R_H increases with increasing H showing a consistency with its temperature dependence. In the case of Sb-doped samples, R_H decreases with increasing H. This fact suggests that the relation R_H=−1/ne is not satisfactory for the previously proposed D⁻ band model, and that further refinement on this model is required.