1965 年 20 巻 6 号 p. 933-937
The electrical resistivity, Hall coefficient and thermoelectric power have been measured over the temperature range from 4.2 to 800°K on Co1−xMnxSi(x\lesssim0.06), Co1−xCrxSi(x\lesssim0.04) and Co1−xNixSi(x\lesssim0.10) solid solutions. The specimen is n-type when x=0. With increasing x, the specimens of Co1−xNixSi become more n-type, while in the specimens of Co1−xMnxSi and Co1−xCrxSi, the contribution of hole conduction increases. The experimental data are qualitatively interpreted in terms of the overlapping band structure scheme, which is appropriate for Co1−xFexSi solid solutions. It is concluded that the replacement of cobalt with manganese or chromium produces approximately one hole per atom, while the replacement of cobalt with nickel produces approximately one electron per atom in the solid solutions.
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