抄録
The observed interference effect of bremsstrahlung produced by high energy electrons in a single crystal of silicon is analyzed. Numerical calculations have been carried out on the total cross section and the linear polarization. The interference part of the cross section is sensitive to the value of atomic form factor at a small momentum transfer. Assuming the form factor of Si atoms determined by the x-ray diffraction, one obtains a good agreement between the theory and the experiment. From the observed fine structure of bremsstrahlung spectrum. a path length of electron in which the interaction is coherent is estimated. Effects of photon beam collimation, temperature of the crystal, and inelastic process due to atomic electrons are discussed.
