High Frequency Transport Properties in InSb under a Magnetic Field

抄録

Theoretical calculation has been made on high-frequency transport properties of InSb under a d.c. magnetic field, leading to the conclusion that the relative increase of microwave loss in InSb under a magnetic field, γ_l, is given by γ₀{1+ω(τ_e+τ_h)}, where γ₀ is the relative resistivity increase Δρ⁄ρ₀ under a d.c. magnetic field with d.c. current, and τ_e and τ_h are the constant relaxation times for electrons and holes respectively. Measurements were made on the microwave power loss at 34 Gc/s at room temperature under magnetic fields up to 1.5 weber/m². The experimental results show an appreciable influence of ωτ on the loss even at room temperature as predicted by the theory.