抄録
Electron spin resonance experiments were carried out at room and liquid nitrogen temperatures on n-type silicon doped with various amounts of phosphorus. A single absorption line was observed, its g-value and line width being functions of the donor concentration. At room temperature, the g-value and line width vary monotonically with the donor concentration, while at liquid nitrogen temperature, these resonance parameters change their dependence at a certain donor concentration. The change in the behavior was considered to have a connection with the transition from localized to nonlocalized state, the onset of degeneracy and impurity band conduction. The experimental results were analyzed by the existing theories of the electron spin resonance of conduction electrons. Qualitative agreement with the theory was found, which would be a confirmation of the model that the observed electron spin resonance is related with the electrical conduction.
