Transport Phenomena in InSb at High Electric and High Magnetic Fields

抄録

Transport properties and the magnetoresistance of single crystal InSb at 77°K have been studied for high applied electric (E_α) and magnetic (B) fields as functions of the two field intensities and the angle between them. Unusual oscillatory behavior was observed in the angular dependence of the magnetoresistance at high magnetic field (ω_cτ<1) and high average current densities. A current-controlled negative resistance and a negative magnetoresistance were observed at angles between E and B of less than 30°. These observations can be understood qualitatively as the result of impact ionization due to the presence of a transverse component of the applied magnetic field.