抄録
Electrical resistivity and Hall coefficient were measured at high temperatures (300°∼900°K) for the epitaxial n-GaAs of carrier concentrations ranging from 1014 to 1017 cm−3. Analysis of the Hall data for the low concentration samples reveals the presence of a very large amount (1019∼1020 cm−3) of deep centers (1.2∼1.3 eV from the conduction band bottom) and a small amount (1014∼1015 cm−3) of less deep centers (∼0.4 eV). These are considered to be donor-like or electron trap centers. Energy difference between the (000) and (100) valleys at 0°K and its temperature coefficient were deduced to be ∼0.4 eV and 2∼3×10−5 eV/°K from the Hall data for the high-concentration samples. Hall mobility due to polar mode and two-phonon resonant scatterings was calculated based on a relaxation time approximation. Agreement with the highest mobility data was satisfactory.
