抄録
Changes in the c-axis electrical resistivity of pyrolytic graphite due to electron irradiations at 80 K and due to subsequent isochronal pulse annealings up to 400 K wave measured. The average carrier mobility in the c-axis direction was calculated from the c-axis resistivity by the use of the carrier density obtained through the a-axis galvanomagnetic property measurements. The c-axis resistivity decreased by irradiation at 80 K. The reciprocal of the average carrier mobility in the c-axis direction increased by 7±2 mV·sec·cm−2 per ppm of Frenkel defects. As to thermal annealings, the c-axis electrical resistivity showed peculiar features compared with the a-axis one. The reciprocal of the average carrier mobility in the c-axis direction, however, showed nearly the same changes in relative values as that in the a-axis direction with annealing temperatures.
