抄録
Measurements of the electrical resistivities, the Seebeck effects, and the Hall effects were performed on the doped and un-doped single crystals of ZnCr2Se4 between 77 and 380K. The influence of heat treatments on the electrical properties are studied and the results are given. Measurement of the Hall effects and the Seebeck effects indicate that all samples investigated are p-type. The hole mobility of these samples is small (order of 100 cm2/Vsec) and independent of temperature while hole concentrations are cosiderably affected by doping or annealing and are temperature dependent. The above results for these ZnCr2Se4 crystals are discussed in connection with deviation of stoichiometry in these single crystals.
