Lattice Location of Si and Al Dissolved in Cr by Proton Channeling and Induced X-Ray Emission
1980 年 49 巻 4 号 p. 1480-1485
詳細
1980 年 49 巻 4 号 p. 1480-1485
Direct determination of the lattice location of Si and Al in Cr-2.3 a/o Si and Cr-1.4 a/o Al crystals has been made by measuring backscattered proton and X-ray emission. Both yields along some axial and planar directions show channeling dips which coincide almost with each other. It is concluded that Si and Al atoms occupy the substitutional sites in Cr at room temperature.
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