Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors. II. Inter-Subband Optical Absorption on InSb

抄録

Based on the calculated results of the subband structure given in the first paper of the present series, the resonance energies of the inter-subband optical absorption in n-channel inversion layers on the surface of InSb are obtained by the calculation of the dynamic conductivity in both the parallel and the perpendicular directions to the surface. Because of the nonparabolicity, the resonance peaks of the inter-subband transitions are seen even in the conductivity parallel to the surface. These peaks give the energy separations between the subbands directly, because the depolarization shift appears only in the conductivity perpendicular to the surface. The calculated results of the resonance energies are compared with the experimental ones measured by Koch’s group.