Electron Scattering by Acceptor-Bound Excitons in Silicon—Revision of “Effects of Positively Charged Acceptor Centres on Cyclotron Resonance”

抄録

Peculiar electron cyclotron resonance behaviour in boron-doped silicon, once misinterpreted as due to direct electron capture by neutral acceptors and later reinterpreted in terms of electron capture as well as scattering by A⁺-centres, is carefully revisited. After examining kinetics at the key reactions of the rate process, shortening of the electron lifetime at low temperatures is still to be associated with A⁺-centres. But broadening of the cyclotron resonance line with decreasing temperature is now ascribed to scattering by excitons bound to neutral acceptors rather than to that by A⁺-centres.