抄録
Anisotropic emission of Auger electrons from clean surfaces of layer type semiconductors GaSe1−xSx has been investigated in the full range of the molar fraction x (0≤x≤1) with particular attention to Se-3dVV and S-2pVV transitions. The experimental results show that Auger electrons are ejected isotropically from atoms which are excited by the primary electron beam. These Auger electrons are subsequently diffracted by surrounding atoms before they escape from the surface. The observed angular dependence exhibits local symmetry of the surface corresponding to each polytype in this crystal system. The experimental results are in good agreement with the diffraction pattern calculated on the basis of a simple kinematic model.
