Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Inelastic Electron Tunneling Spectra in Pb-GaSxSe1−x-Pb Junctions
Kunihiko YamaguchiYuichiro Nishina
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1984 年 53 巻 12 号 p. 4257-4265

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The mode behaviors of the zone-edge phonons in the pseudo-binary layer-type semiconductor GaSxSe1−x (0≤x≤1) have been analyzed in terms of the inelastic electron tunneling (IET) spectra in Pb-GaSxSe1−x-Pb junctions. The IET spectral peaks correspond to those phonon energies with their extrema in the density of states at the zone-edges. The x-dependence of the phonon energy thus determined indicates that most of these phonons exhibit two-mode behaviors.
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