Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_1−xAs Heterojunction Interfaces

抄録

Angular dependence and temperature dependence of negative magnetoresistance in two-dimensional electron gas in GaAs/Al_xGa_1−xAs (x\simeq0.3) heterostructure are measured at temperatures between 4.2 K and 1.1 K. The temperature dependence of τ_ε is analysed by a theory developed recently by Fukuyama and Abrahams. The experimental τ_ε⁻¹ in the dirty limit is smaller than the theoretical one by a factor of 1.5∼2.3.