Nonlinear Conductivity and Broad Band Noise of Monoclinic TaS3
1985 年 54 巻 5 号 p. 1912-1922
詳細
1985 年 54 巻 5 号 p. 1912-1922
We have studied the nonlinear conductivity and the accompanied broad band noise of monoclinic TaS3. The noise voltage becomes maximum just above the threshold field ET of the nonlinear conduction. For comparison, the same measurements were made for NbSe3 and the similar results were obtained. The generation of broad band noise is explained in terms of two valued process, and the number of degrees of freedom of the CDW motion, N, is estimated to be 109−10/cm3 in both of monoclinic TaS3 which is semiconducting at low temperatures, and NbSe3 which is metallic. This result indicates that the motion of the CDW’s is not described as that of a rigid body. N is found to decrease with decreasing temperature in monoclinic TaS3.
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