Interaction between Kondo States and the Hall Effect of Dense Kondo System Ce_xLa_1−xB₆

抄録

Measurements of electrical resistivity (37 mK≤T\lesssim780 K for CeB₆), magnetoresistivity (H\lesssim100 kOe) and Hall resistivity (H\lesssim150 kOe, 4.2 K≤T≤53 K) have been done for single crystalline samples of Ce_xLa_1−xB₆ (0.03≤x≤1). At very low temperatures, the T² law of resistivity is confirmed. A kind of universality for A⁄γ²=α is found even for magnetically ordered CeB₆. The concentration dependence of residual resistivity shows that an interaction effect between Kondo states appears sharply around x=0.1. The interaction is weak for x<0.1 and does not vary so much for 0.1≤x<1. The Hall resistivity is proportional to magnetic field up to 150 kOe and is independent of the temperature down to 4.2 K. The real value of the Kondo temperature is evaluated.