Experiments on Scaling Relation of Conductivities in Silicon MOS Inversion Layers in Strong Magnetic Fields

抄録

Scaling relation of the diagonal and the Hall conductivities is experimentally studied in the (0↓+) Landau level (0 refers to Landau quantum number, ↓ to antiparallel spin to the magnetic field, + to lower valley) of an n-channel inversion layer on a silicon (001) surface in magnetic fields of 13 T and 15 T at temperatures between 1.5 K and 4.2 K.