Magnetophonon Resonance at High Electric and Magnetic Fields in Small n⁺nn⁺ GaAs Structures

抄録

Magnetophonon resonance observed at high electric and magnetic fields in thin n⁺nn⁺ GaAs structure is shown to be well explained in terms of electric field induced inelastic inter-Landau-level scattering (IILLS). Splitting and inversion of the resonance peaks observed at high electric fields are explained by theoretical analysis of magnetoconductivity σ_xx based on Kubo formula. The general oscillatory structure of the magnetoconductivity is given by
(Remark: Graphics omitted.),
which is valid for \bare<<1, where γ is the broadening factor, \barω₀=ω₀⁄ω_c, ω₀ and ω_c are the cyclotron and optic phonon frequencies, \bare=\sqrt2eEl_B⁄hω_c, l_B is the classical cyclotron radius and E is the magnitude of the electric field.