1988 年 57 巻 11 号 p. 4021-4028
Infrared absorption in boron-doped silicon has been investigated in the photon energy range from 450 to 1000 cm−1. Below the continuous background absorption by hole transition, a series of profound dips are observed for dipole-forbidden transitions of phonon and electronic states. These transitions become permitted through configuration interaction with the electronic continuum of the hole state, leading to a sharp antiresonance structure in the spectrum. This interpretation is confirmed by our measurement of spectral dependences on acceptor concentration, donor compensation and sample temperature.
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