Electrical Resistivity and Thermionic Emission of Silicon

抄録

The simultaneous measurements of electrical resistivity and thermionic emission of silicon over the intrinsic temperature range from 1100°C to 1350°C have been carried out by means of heating a small silicon piece directly. The results indicate that the depth of the conduction band, the energy gap between filled and conduction bands and the work function are 3.47 eV, 1.10 eV and 4.02 eV, respectively, and also Richardson’s constant 5.6 amp. cm.⁻² deg.⁻²