Abstract
Scanning capacitance microscopy (SCM) is one of techniques imaging two-dimensional carrier distribution in semiconductor devices. We have demonstrated that quantitative analysis of carrier concentration can be performed using calibration curves, which are statistically prepared for respective materials like silicon, silicon carbide, etc. The procedure was circulated to research organizations in domestic round robin test, and this method was found to be available from the viewpoint of comparability among users for the industrial standardization. It was also applied to other microscopes, and their profiles of carrier concentration coincide with each other, suggesting compatible to next-generation microscopes which would come up in the future.
