Scanning capacitance microscopy (SCM) is one of techniques imaging two-dimensional carrier distribution in semiconductor devices. We have demonstrated that quantitative analysis of carrier concentration can be performed using calibration curves, which are statistically prepared for respective materials like silicon, silicon carbide, etc. The procedure was circulated to research organizations in domestic round robin test, and this method was found to be available from the viewpoint of comparability among users for the industrial standardization. It was also applied to other microscopes, and their profiles of carrier concentration coincide with each other, suggesting compatible to next-generation microscopes which would come up in the future.

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For observation of aquatic micro-organisms by a scanning electron microscope, sample pretreatments are necessary to avoid the deformation of cell membrane by evaporation of moisture from inside of the cell in vacuum and also the charging-up of sample under irradiation of electron beam. In the present paper, we report on a simple preparation method by ethanol dehydration and the ionic liquid coating method without using any apparatus for preparation such as a refrigerator, a vacuum equipment and etc.

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Surface Debye temperatures for the Si(111)-(7×7) and the Si(111)-(√3×√3)-Ag surfaces are determined by the surface structural analysis of the reflection high-energy positron diffraction (RHEPD). Relations between surface phase transitions and root-mean-square amplitudes of surface atoms are discussed using the obtained surface Debye temperatures. An order-disorder phase transition of the Si(111)-(√3×√3)-Ag structure is discussed by the result of the structure analysis using order parameters of atomic arrangements of Ag. Difference of surface plasmon excitation processes between electron and positron beams is also discussed.

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