Quantitative Analysis on Diffused Trace Elements by Atom Probe Tomography

抄録

Elemental analyses for detecting lowly concentrated elements at small volume such as interfaces and surface are very difficult due to the limitations of detection and analytical spot size. Through the analysis by atom probe tomography, we were able to confirm the distribution and concentration of the trace elements diffused into the passive layer of stainless steel and the thin film on SiC complementarily with x-ray photoelectron spectrometer, secondary ion mass spectrometer, and transmission electron microscopy.