抄録
In this work, we evaluate the viability of an improved stage-scan strain mapping method based on nanosized selected area electron diffraction. We demonstrate high accuracy and precision comparable with the other transmission electron microscopy methods for strain mapping. High characteristics of the stage-scan strain mapping method were achieved owning to idea of scanning the sample and acquisition of diffraction patterns under the fixed electron beam, and further post-processing of the raw data with Gaussian fitting for precise determination of the diffraction spot positions.
