Characterization of Al-doped ZnO thin films by laboratory-based hard X-ray photoelectron spectroscopy system

Abstract

The highly transparent conductive Al-doped ZnO thin films were characterized by the laboratory-based hard X-ray photoelectron spectroscopy system using monochromatic Cr Kα line as an excitation X-ray source. The Al 1s core spectra of dopants can be measured in practically high throughput. The area intensity was proportional to the doping contents. The peak position of Al 1s systematically shifted to low binding energy with increasing the Al content. It was suggested that some correlations with the carrier concentration in AZO thin films.