Abstract
The non-destructive and highly quantitative high-resolution Rutherford backscattering spectrometry (HRBS) was applied to the analysis of layered structure at the surface and near-surface of deposited thin film materials. The depth resolution of HRBS was determined as 0.2nm from measurement of Ta/Co/Ta multilayer films. HRBS provided compositional and structural information, and Ar distribution for the near surface region of aluminum films deposited on Si-substrate by electron cyclotron resonance (ECR) sputtering and chemical vapor deposition (CVD). Ta-oxide/Ta multilayer specimens with were also analyzed for different milling processing. Individual Ta oxide layers were clearly resolved and the thickness of each layer was obtained. These results lead to a simple, easy and efficient calculation procedure of oxide layer thickness required for a process monitoring.
