抄録
Surface segregation of Al in the Cr/Al/Al thin film system was observed at 813K. The film was deposited by rf magnetron sputtering. The segregation phenomenon and the depth profile of the segregated layer were monitored by XPS. Cr 2p and Al 2s photoelectron peaks were analyzed in detail to investigate the chemical interaction of the segregated layer (Al) with the film material (Cr).
