Journal of Surface Analysis
Online ISSN : 1347-8400
Print ISSN : 1341-1756
ISSN-L : 1341-1756
- Metals -
Boron and Oxygen Redistribution during Silicidation Process of Titanium-Silicon System
K. YanagiharaS. Hayashi
著者情報
ジャーナル フリー

2002 年 9 巻 3 号 p. 408-411

詳細
抄録
Redistribution behavior of B and O during silicidation process of titanium-silicon system at 923 K has been examined by secondary ion mass spectrometry and transmission electron microscopy. Amorphous like TiSix forms between unreacted Ti and TiSi2. B accumulates in TiSix and O accumulates in unreacted Ti. The solubility of B and O in Ti and TiSix causes the difference of redistribution behavior of B and O during Ti silicidation.
著者関連情報
© 2002 by The Surface Analysis Society of Japan
前の記事 次の記事
feedback
Top