[volume title in Japanese]
Session ID : 11a-H10-2
Conference information
Host: The Japan Society of Applied Physics
Name : [in Japanese]
Number : 73
Location : [in Japanese]
Date : September 11, 2012 - September 14, 2012
Improved Crystal quality of a-plane GaN on r-plane sapphire by controlled integration of silica nano-spheres
Sung Hyun Park, Jinsub Park, Kisu Joo, Duck-Jae You, Daeyoung Moon, Jeonghwan Jang, Dong-Uk Kim, Hojun Chang, Seunghyun Moon, *Euijoon Yoon, Yoon-Kyu Song, Heonsu Jeon, Jimmy Xu, Yasushi Nanishi
Author information
Keywords:
11a-H10-2,
Symposium,
Growth of In-rich InGaN and its application,
GaN,
light emitting diode,
nitride semiconductors
Details
Article 1st page
