[volume title in Japanese]
Session ID : 11p-H10-1
Conference information
Host: The Japan Society of Applied Physics
Name : [in Japanese]
Number : 73
Location : [in Japanese]
Date : September 11, 2012 - September 14, 2012
Growth of InN and In-rich InGaN and those applications -Introductory Talk-
Keywords:
11p-H10-1,
Symposium,
Growth of In-rich InGaN and its application,
InGaN,
LED,
Nitride Semiconductor
Details
Article 1st page
