JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 61st JSAP Spring Meeting 2014
Session ID : 18p-PG3-4
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InGaAs channel tri-gate MOSFETs with MOVPE regrown source/drain
*Yuichi MishimaToru KanazawaHaruki KinoshitaEiji UeharaYasuyuki Miyamoto
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Keywords: 18p-PG3-4, MOSFET, InGaAs
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© 2014 The Japan Society of Applied Physics
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