JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 62nd JSAP Spring Meeting 2015
Session ID : 12a-P12-6
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Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks
*ChihYu ChangOsamu IchikawaTakenori OsadaHisashi YamadaMitsuru TakenakaShinichi Takagi
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© 2015 The Japan Society of Applied Physics
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