JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 62nd JSAP Spring Meeting 2015
Session ID : 13p-P17-16
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Effects of dry etching on Al2O3/AlGaN/GaN MOS interface properties
*Zenji YatabeJoji OhiraTaketomo SatoTamotsu Hashizume
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© 2015 The Japan Society of Applied Physics
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