JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 76th JSAP Autumn Meeting 2015
Session ID : 16p-2J-10
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Monolithically Integrated GaAsSb-based Backward Diode with InP-based HEMTs for Receiver Applications at 300 GHz
*Tsuyoshi TakahashiMasaru SatoShoichi ShibaYasuhiro NakashaNaoki Hara
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© 2015 The Japan Society of Applied Physics
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