JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 63rd JSAP Spring Meeting 2016
Session ID : 21a-W541-11
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Relationship between dislocation and deep-level traps in GaN Schottky diode on GaN substrate
*Suguru MaseYuya UrayamaTakashi Egawa
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© 2016 The Japan Society of Applied Physics
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