JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 63rd JSAP Spring Meeting 2016
Session ID : 22a-W541-8
Conference information

Electrical Characterization of SiO2 / GaN Vertical MOS Capacitor treated by High Pressure Water Vapor Annealing
*Yuta TominagaUeno KatsunoriKoji YoshitsuguTada YukiYasuaki IshikawaYukiharu Uraoka
Author information
Keywords: 22a-W541-8, GaN
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Article 1st page
Content from these authors
© 2016 The Japan Society of Applied Physics
Previous article Next article
feedback
Top