Two-Substrate-Temperatures Growth Technique: An effective method for reduction of Bi segregation effect in GaAsBi/GaAs MQWs

The 64th JSAP Spring Meeting 2017

セッションID: 17a-B5-5

会議情報

主催: The Japan Society of Applied Physics

会議名: 応用物理学会春季学術講演会

回次: 64

開催地: パシフィコ横浜

開催日: 2017/03/14 - 2017/03/17

Two-Substrate-Temperatures Growth Technique: An effective method for reduction of Bi segregation effect in GaAsBi/GaAs MQWs

著者情報

キーワード: 17a-B5-5, MBE, GaAsBi/GaAs MQWs, TEM, Segregation

会議録・要旨集フリー

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