Near-interface border traps characterization for GeO2/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy

Weichen Wen; Taisei Sakaguchi; Keisuke Yamamoto; Dong Wang; Hiroshi Nakashima

doi:10.11470/jsapmeeting.2017.2.0_2850

The 78th JSAP Autumn Meeting 2017

Session ID : 5a-C11-3

DOI https://doi.org/10.11470/jsapmeeting.2017.2.0_2850

Conference information

Host: The Japan Society of Applied Physics

Name : JSAP Autumn Meeting

Number : 78

Location : [in Japanese]

Date : September 05, 2017 - September 08, 2017

Near-interface border traps characterization for GeO₂/Ge gate stacks grown by low and high temperature thermal oxidation by using deep-level transient spectroscopy

*Weichen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

Author information

Keywords: 5a-C11-3, Ge MOS, border-trap, interface-trap

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