The 66th JSAP Spring Meeting 2019
Session ID : 9a-M121-4
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Spring Meeting
Number : 66
Location : [in Japanese]
Date : March 09, 2019 - March 12, 2019
Impact of Forming Gas Annealing on Electrical Properties of SiO2/GaN MOS Devices
*Takahiro Yamada, Yuhei Wada, Daiki Terashima, Mikito Nozaki, Katsunori Ueno, Shinya Takashima, Hisashi Yamada, Tokio Takahashi, Mitsuaki Shimizu, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
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