The 66th JSAP Spring Meeting 2019
Session ID : 11p-PB3-10
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Spring Meeting
Number : 66
Location : [in Japanese]
Date : March 09, 2019 - March 12, 2019
Characteristics of AlGaN/GaN high electron mobility transisors with various p-type GaN gate structures fomed by dry etching
Details
Article 1st page
