The 80th JSAP Autumn Meeting 2019
Session ID : 20a-E312-3
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 80
Location : [in Japanese]
Date : September 18, 2019 - September 21, 2019
RF Power Performance when biased at VDS of −70 V for 2DHG Diamond MOSFETs with 200-nm Insulator Al2O3;
*Yukiko Suzuki, Ken Kudara, Shoichiro Imanishi, Kiyotaka Horikawa, Atsushi Hiraiwa, Hiroshi Kawarada
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