JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 80th JSAP Autumn Meeting 2019
Session ID : 20a-E312-4
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Electrical Properties of Inversion Channel Diamond MOSFET with N-doped body
*Tsubasa MatsumotoUkyo SakuraiTomoya YamakawaHiromitsu KatoToshiharu MakinoMasahiko OguraDaisuke TakeuchiSatoshi YamasakiTakao InokumaNorio Tokuda
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© 2019 The Japan Society of Applied Physics
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