The 80th JSAP Autumn Meeting 2019
Session ID : 18p-PB2-2
Conference information
Host:
The Japan Society of Applied Physics
Name :
JSAP Autumn Meeting
Number :
80
Location :
[in Japanese]
Date :
September 18, 2019 - September 21, 2019
The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices