JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 80th JSAP Autumn Meeting 2019
Session ID : 18p-PB2-2
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The effect of Hf-ion implantation on the charge trapping characteristics of MONOS-type memory devices
*Rahul AgrawalKiyoteru Kobayashi
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© 2019 The Japan Society of Applied Physics
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