The 80th JSAP Autumn Meeting 2019
Session ID : 19a-E301-7
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Autumn Meeting
Number : 80
Location : [in Japanese]
Date : September 18, 2019 - September 21, 2019
Transient Response of Drain Current after Biasing-Stress in GaN HEMTs on SiC Substrates with Field Plate
Keywords:
19a-E301-7,
Nitride semiconductor
Details
Article 1st page
