JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 67th JSAP Spring Meeting 2020
Session ID : 14a-B401-9
Conference information

DLTS and MCTS study of n-GaN Schottky diodes fabricated after removal of gate oxide
*Sayaka HaradaKazuya TamuraTowa KojimaYukito FurugoriHikaru YoshidaYutaka TokudaTakashi OkawaHidemoto Tomita
Author information
Keywords: 14a-B401-9, DLTS, MCTS, GaN
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Article 1st page
Content from these authors
© 2020 The Japan Society of Applied Physics
Previous article Next article
feedback
Top