The 67th JSAP Spring Meeting 2020
Session ID : 14p-B401-16
Conference information
Host: The Japan Society of Applied Physics
Name : JSAP Spring Meeting
Number : 67
Location : [in Japanese]
Date : March 12, 2020 - March 15, 2020
Reduction of contact resistance of ALD-Al2O3 diamond MOSFETs by selective regrowth high concentration boron doped layer;Drain current density | IDS | > 1 A/mm
*Yukiko Suzuki, Shoichiro Imanishi, Ken Kudara, Kiyotaka Horikawa, Shotaro Amano, Masayuki Iwataki, Aoi Morishita, Atsushi Hiraiwa, Hiroshi Kawarada
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