JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 67th JSAP Spring Meeting 2020
Session ID : 14p-B401-15
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Insulating Ga2O3 layer formation at SiO2/β-Ga2O3 interface during oxygen annealing at 1000℃ and its impact on Ga2O3 MOS interface characteristics
*QIN MAOKoji KITA
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© 2020 The Japan Society of Applied Physics
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