JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 68th JSAP Spring Meeting 2021
Session ID : 16a-Z16-6
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Investigation of Post-Deposition Annealing Conditions for Improving Interface Property of SiO2/GaN MOS Devices
*Hidetoshi MizobataYuhei WadaMikito NozakiTakuji HosoiTakayoshi ShimuraHeiji Watanabe
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Keywords: 16a-Z16-6, FGA, GaN MOS, GaOx
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© 2021 The Japan Society of Applied Physics
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